mar. 201 3 . version 2.0 magnachip semiconductor ltd . 1 mp s c2 n 6 0u 12 0 120 0v frd module absolute maximum ratings @ t c = 25 o c ( per leg ) characteristics conditions symbol rating unit repetitive peak reverse voltage v rrm 1200 v reverse dc voltage v r(dc) 960 v average forward current t c =25 o c resistive load i f(av) 120 a t c = 10 0 o c 60 a surge(non - repetitive) forward current one half cycle at 60hz, peak value i fsm 840 a i 2 t for fusing value for one cycle current, t w = 8.3ms, t j = 25 2 t 2.93 * 10 3 a 2 s junction temperature t j - 40 ~ 15 0 d 220 w isolation voltage @ac 1 minutes v iso l 2500 v storage temperature t stg - 40 ~ 1 2 5 mp s c2 n 6 0u 12 0 120 0v frd modu le general description ultra - frd module devices are optimized to reduce losses and e mi/rfi in high frequency power conditioning electrical systems. these diode modules are ideally suited for power converters, m otors drives and other applications where switching losses are significant portion of the total losses. features ? repetitive reverse voltage : v rrm = 120 0 v ? low forward voltage : v f (typ.) = 2.2 v ? average forward current : i f ( av .)= 6 0a @t c =100 ? ultra - fast reverse recovery time : t rr (typ.) = 3 0 n s ? extensive characterization of recovery parameters ? reduced emi and rfi ? isolation type package applications ? high speed & high p ower con verters , welders ? various switching and telecommunication power supply sot - 227 equivalent circuit e301932
mar. 201 3 . version 2.0 magnachip semiconductor ltd . 2 mp s c2 n 6 0u 12 0 120 0v frd module electrical characteristics @ t c = 25 o c (unless otherwise specified) characteristics conditions symbol min. typ. max. unit cathode anode breakdown voltage i r =100ua v r 120 0 - - v diode maximum forward voltage i f = 6 0a t c =25 v fm - 2.2 2 . 8 v t c =100 - 2.0 - diode peak reverse recovery current t c =100 , v rrm applied t c =100 i rrm - - 1.0 ma diode reverse recovery time i f = 1 a, v r =30v di/dt = - 12 0a/us t c = 25 t rr - 30 45 ns diode reverse recovery time i f = 6 0 a, v r = 6 00v di/dt = - 12 0a/us t c =25 t rr - 110 - n s t c =100 - 1 8 0 - thermal characteristics characteristics conditions symbol min. typ. max. unit thermal resistance(isolation type) junction to case r th(j - c) - - 0. 5 6 /w
mar. 201 3 . version 2.0 magnachip semiconductor ltd . 3 mp s c2 n 6 0u 12 0 120 0v frd module f ig.1 typical forward voltage drop vs. instantaneous forward current fig. 2 typical reverse recovery time v s. C di/dt fig. 3 t ransient thermal impedance( zthjc) characteristics fig. 4 forward current derating curve 0 1 2 3 0 50 100 150 200 forward current,i f [a] t c =25 t c =125 forward voltage drop,v f [v] 50 100 150 200 250 0 30 60 90 120 150 reverse recovery time[ns] di/dt[a/us] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-4 1e-3 0.01 0.1 1 t c =25 thermal response zthjc[ /w] rectangular pulse duration time[sec] 0 20 40 60 80 100 120 140 160 0 50 100 150 dc average forward current,i f(avg) [a] case temperatute, tc[ ]
mar. 201 3 . version 2.0 magnachip semiconductor ltd . 4 mp s c2 n 6 0u 12 0 120 0v frd module package dimension sot - 227 d imensions are in millimeters, unless otherwise specified tbd tbd
mar. 201 3 . version 2.0 magnachip semiconductor ltd . 5 mp s c2 n 6 0u 12 0 120 0v frd module disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er respon sibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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